DESCRIPTION Trans GP BJT NPN 80V 1A Automotive 4-Pin(3+Tab) SOT-89 T/R
Implement this NPN BCX56-16,115 GP BJT from NXP Semiconductors to add switching and amplifying capabilities to your electronic circuit design. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 1250 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.
FEATURES • High current (max. 1 A) • Low voltage (max. 80 V). • High current • Two current gain selections • High power dissipation capability
APPLICATIONS • Driver stages of audio and video amplifiers. • Linear voltage regulators • Low-side switches • MOSFET drivers
Specifications EU RoHS Compliant Type NPN Number of Elements per Chip 1 Maximum Collector Base Voltage (V) 100 Maximum Emitter Base Voltage (V) 5 Maximum Collector Emitter Voltage (V) 80 Maximum DC Collector Current (A) 1 Maximum Power Dissipation (mW) 1250 Minimum DC Current Gain 100@150mA@2V Maximum Transition Frequency (MHz) 180(Typ) Product Category Bipolar Power Minimum Operating Temperature (°C) -65 Maximum Operating Temperature (°C) 150 Packaging Tape and Reel Mounting Surface Mount Package Height (mm) 1.6(Max) Package Length (mm) 4.6(Max) Package Width (mm) 2.6(Max) PCB changed 3 Tab Tab Standard Package Name SOT-89 Supplier Package SOT-89 Pin Count 4 Lead Shape Flat
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